Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.
نویسندگان
چکیده
The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
منابع مشابه
Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
متن کاملSwitching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...
متن کاملNovel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor
In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...
متن کاملRapid, all-optical crystal orientation imaging of two-dimensional transition metal dichalcogenide monolayers
Articles you may be interested in Acoustic phonon assisted free-carrier optical absorption in an n-type monolayer MoS2 and other transition-metal dichalcogenides J. Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects Appl. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field ...
متن کاملAbsolute deformation potentials of two-dimensional materials
We present ab initio calculations of uniaxial absolute deformation potentials of the valence and the conduction bands in monolayer MoS2, MoSe2, WS2, WSe2, h-BN, and phosphorene. Calculations are performed using both semilocal and hybrid functionals. The absolute positions of the band edges in strained and unstrained materials are determined using the vacuum level as reference. For WSe2, we comp...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Small
دوره 12 41 شماره
صفحات -
تاریخ انتشار 2016